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Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
Tian, Zhen; Guo, Chenglei; Zhao, Mingxing; Li, Ranran; Xue, Jiamin; xuejm@shanghaitech.edu.cn
2017
发表期刊ACS Nano
卷号11期号:2页码:2219
摘要We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross Hall-bar structure are fabricated. They show heavily hole-doped (similar to 10(19) cm(-3)) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm(2) V-1 s(-1), which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be similar to 45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.
文章类型Article
DOI10.1021/acsnano.6b08704
资助者National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000]
收录类别SCI
资助者National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000] ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200]; ShanghaiTech University; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB04030000]
WOS记录号WOS:000395357300118
引用统计
被引频次:48[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28777
专题其他
通讯作者xuejm@shanghaitech.edu.cn
作者单位中国科学院上海光学精密机械研究所
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GB/T 7714
Tian, Zhen,Guo, Chenglei,Zhao, Mingxing,et al. Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy[J]. ACS Nano,2017,11(2):2219.
APA Tian, Zhen,Guo, Chenglei,Zhao, Mingxing,Li, Ranran,Xue, Jiamin,&xuejm@shanghaitech.edu.cn.(2017).Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy.ACS Nano,11(2),2219.
MLA Tian, Zhen,et al."Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy".ACS Nano 11.2(2017):2219.
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