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Photoemission study of the electronic structure of valence band convergent SnSe
Wang, C. W.; Xia, Y. Y. Y.; Tian, Z.; Jiang, J.; Li, B. H.; Cui, S. T.; Yang, H. F.; Liang, A. J.; Zhan, X. Y.; Hong, G. H.; Liu, S.; Chen, C.; Wang, M. X.; Yang, L. X.; Liu, Z.; Mi, Q. X.; Li, G.; Xue, J. M.; Liu, Z. K.; Chen, Y. L.; liuzhk@shanghaitech.edu.cn; yulin.chen@physics.ox.ac.uk
2017
发表期刊Phys. Rev. B
卷号96期号:16
摘要IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance. The multiple close-to-degenerate (or "convergent") valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
文章类型Article
DOI10.1103/PhysRevB.96.165118
资助者National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100]
收录类别SCI
资助者National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100] ; National Key R&D program of China [2017YFA0305400]; Chinese Academy of Science-Shanghai Science Research Center [CAS-SSRC-YH-2015-01]; Engineering and Physical Sciences Research Council [EP/M020517/1]; National Natural Science Foundation of China [11674229, 11227902]; Science and Technology Commission of Shanghai Municipality [14520722100]
WOS记录号WOS:000412700200002
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28771
专题其他
通讯作者liuzhk@shanghaitech.edu.cn; yulin.chen@physics.ox.ac.uk
作者单位中国科学院上海光学精密机械研究所
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GB/T 7714
Wang, C. W.,Xia, Y. Y. Y.,Tian, Z.,et al. Photoemission study of the electronic structure of valence band convergent SnSe[J]. Phys. Rev. B,2017,96(16).
APA Wang, C. W..,Xia, Y. Y. Y..,Tian, Z..,Jiang, J..,Li, B. H..,...&yulin.chen@physics.ox.ac.uk.(2017).Photoemission study of the electronic structure of valence band convergent SnSe.Phys. Rev. B,96(16).
MLA Wang, C. W.,et al."Photoemission study of the electronic structure of valence band convergent SnSe".Phys. Rev. B 96.16(2017).
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