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First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability
Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi; keyq@shanghaitech.edu.cn
2017
Source PublicationPhys. Rev. B
Volume95Issue:12
AbstractBecause disorders are inevitable in realistic nanodevices, the capability to quantitatively simulate the disorder effects on electron transport is indispensable for quantum transport theory. Here, we report a unified and effective first-principles quantum transport method for analyzing effects of chemical or substitutional disorder on transport properties of nanoelectronics, including averaged transmission coefficient, shot noise, and disorder-induced device-to-device variability. All our theoretical formulations and numerical implementations are worked out within the framework of the tight-binding linear muffin tin orbital method. In this method, we carry out the electronic structure calculation with the density functional theory, treat the nonequilibrium statistics by the nonequilbrium Green's function method, and include the effects of multiple impurity scattering with the generalized nonequilibrium vertex correction (NVC) method in coherent potential approximation (CPA). The generalized NVC equations are solved from first principles to obtain various disorder-averaged two-Green's-function correlators. This method provides a unified way to obtain different disorder-averaged transport properties of disordered nanoelectronics from first principles. To test our implementation, we apply the method to investigate the shot noise in the disordered copper conductor, and find all our results for different disorder concentrations approach a universal Fano factor 1/3. As the second test, we calculate the device-to-device variability in the spin-dependent transport through the disordered Cu/Co interface and find the conductance fluctuation is very large in the minority spin channel and negligible in the majority spin channel. Our results agree well with experimental measurements and other theories. In both applications, we show the generalized nonequilibrium vertex corrections play a determinant role in electron transport simulation. Our results demonstrate the effectiveness of the first-principles generalized CPA-NVC for atomistic analysis of disordered nanoelectronics, extending the capability of quantum transport simulation.
SubtypeArticle
DOI10.1103/PhysRevB.95.125428
Funding OrganizationShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003]
Indexed BySCI
Funding OrganizationShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003] ; ShanghaiTech University start-up fund; The Thousand Young Talents Plan; Shanghai "Shuguang Plan"; National Basic Research Program of China [2012CB921304]; NNSF-China [61376105, 21421003]
WOS IDWOS:000399219200004
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.siom.ac.cn/handle/181231/28766
Collection其他
Corresponding Authorkeyq@shanghaitech.edu.cn
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
Yan, Jiawei,Wang, Shizhuo,Xia, Ke,et al. First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability[J]. Phys. Rev. B,2017,95(12).
APA Yan, Jiawei,Wang, Shizhuo,Xia, Ke,Ke, Youqi,&keyq@shanghaitech.edu.cn.(2017).First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability.Phys. Rev. B,95(12).
MLA Yan, Jiawei,et al."First-principles quantum transport method for disordered nanoelectronics: Disorder-averaged transmission, shot noise, and device-to-device variability".Phys. Rev. B 95.12(2017).
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