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Field-effect transistors of high-mobility few-layer SnSe2
Guo, Chenglei; Tian, Zhen; Xiao, Yanjun; Mi, Qixi; Xue, Jiamin; xuejm@shanghaitech.edu.cn
2016
发表期刊Appl. Phys. Lett.
卷号109期号:20
摘要We report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be similar to 85 cm(2) V-1 s(-1) at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of similar to 10(5). These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials. Published by AIP Publishing.
文章类型Article
DOI10.1063/1.4967744
资助者National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000
收录类别SCI
资助者National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000 ; National Natural Science Foundation of China [11504234]; Science and Technology Commission of Shanghai Municipality [15QA1403200, 14PJ1406600]; ShanghaiTech University; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB0403000
WOS记录号WOS:000388000000045
引用统计
被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28765
专题其他
通讯作者xuejm@shanghaitech.edu.cn
作者单位中国科学院上海光学精密机械研究所
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GB/T 7714
Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,et al. Field-effect transistors of high-mobility few-layer SnSe2[J]. Appl. Phys. Lett.,2016,109(20).
APA Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,Mi, Qixi,Xue, Jiamin,&xuejm@shanghaitech.edu.cn.(2016).Field-effect transistors of high-mobility few-layer SnSe2.Appl. Phys. Lett.,109(20).
MLA Guo, Chenglei,et al."Field-effect transistors of high-mobility few-layer SnSe2".Appl. Phys. Lett. 109.20(2016).
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