Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias

doi:10.1038/srep40785

SIOM OpenIR > 信息光学与光电技术实验室

	Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias
	He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji; ya.cheng@siom.ac.cn; ksugioka@riken.jp
	2017
发表期刊	Sci Rep
卷号	7
摘要	Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.
文章类型	Article
部门归属	信息光电
DOI	10.1038/srep40785
资助者	National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300]
收录类别	SCI
资助者	National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300]
WOS记录号	WOS:000392185300001
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.siom.ac.cn/handle/181231/28528
专题	信息光学与光电技术实验室
通讯作者	ya.cheng@siom.ac.cn; ksugioka@riken.jp
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	He, Fei,Yu, Junjie,Tan, Yuanxin,et al. Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias[J]. Sci Rep,2017,7.
APA	He, Fei.,Yu, Junjie.,Tan, Yuanxin.,Chu, Wei.,Zhou, Changhe.,...&ksugioka@riken.jp.(2017).Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.Sci Rep,7.
MLA	He, Fei,et al."Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias".Sci Rep 7(2017).