KMS Shanghai Institute of Optics and Fine Mechanics, CAS
| Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias | |
| He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji; ya.cheng@siom.ac.cn; ksugioka@riken.jp | |
| 2017 | |
| Source Publication | Sci Rep
 |
| Volume | 7 |
| Abstract | Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs. |
| Subtype | Article |
| Department | 信息光电 |
| DOI | 10.1038/srep40785 |
| Funding Organization | National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] |
| Indexed By | SCI |
| Funding Organization | National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] |
| WOS ID | WOS:000392185300001 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.siom.ac.cn/handle/181231/28528 |
| Collection | 信息光学与光电技术实验室 |
| Corresponding Author | ya.cheng@siom.ac.cn; ksugioka@riken.jp |
| Affiliation | 中国科学院上海光学精密机械研究所 |
| Recommended Citation GB/T 7714 | He, Fei,Yu, Junjie,Tan, Yuanxin,et al. Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias[J]. Sci Rep,2017,7. |
| APA | He, Fei.,Yu, Junjie.,Tan, Yuanxin.,Chu, Wei.,Zhou, Changhe.,...&ksugioka@riken.jp.(2017).Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.Sci Rep,7. |
| MLA | He, Fei,et al."Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias".Sci Rep 7(2017). |
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