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Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory
Meng, Yun; Wu, Liangcai; Song, Zhitang; Wen, Shuai; Jiang, Minghui; Wei, Jingsong; Wang, Yang; wuliangcai@mail.sim.ac.cn; ywang@siom.ac.cn
2017
发表期刊Mater. Lett.
卷号201页码:109
摘要In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10 ns electric pulse, indicating its excellent electrical properties. Furthermore, ferntosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain. (C) 2017 Elsevier B.V. All rights reserved.
文章类型Article
部门归属存储
DOI10.1016/j.matlet.2017.05.003
资助者National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002]
收录类别SCI
资助者National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002] ; National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002]
WOS记录号WOS:000402359900028
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28255
专题高密度光存储技术实验室
通讯作者wuliangcai@mail.sim.ac.cn; ywang@siom.ac.cn
作者单位中国科学院上海光学精密机械研究所
推荐引用方式
GB/T 7714
Meng, Yun,Wu, Liangcai,Song, Zhitang,et al. Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory[J]. Mater. Lett.,2017,201:109.
APA Meng, Yun.,Wu, Liangcai.,Song, Zhitang.,Wen, Shuai.,Jiang, Minghui.,...&ywang@siom.ac.cn.(2017).Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory.Mater. Lett.,201,109.
MLA Meng, Yun,et al."Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory".Mater. Lett. 201(2017):109.
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