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Wide Bandgap Engineering of beta-(Al, Ga)(2)O-3 Mixed Crystals
Xiao HL(肖海林); Shao GQ(邵刚勤); Sai QL(赛青林); Xia ZT(夏长泰); Zhou SM(周圣明); Yi XZ(易学专); hlxiao2014@163.com; saiql@siom.ac.cn; xia_ct@siom.ac.cn
2016
发表期刊无机材料学报
卷号31期号:11页码:1258
摘要Bandgap tunable beta-Ga2O3 mixed crystals with different Al3+ concentration were grown by the optical floating zone (OFZ) method. When the nominal Al3+ doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction (XRD) revealed that beta-(Al, Ga)(2)O-3 mixed crystals kept the crystal structure of beta-Ga2O3 without foreign phases and the lattice parameters decreased with the increasing Al3+ concentration. Al-27 magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy showed that Al3+ occupied Ga3+ positions and the ratio of Al3+(IV)/ Al3+(VI) was about 1:3. The transmittance spectra were measured to investigate the bandgap of beta-(Al, Ga)(2)O-3 mixed crystals. Results showed that the bandgap increased continuously with the Al3+ concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of beta-Ga2O3 crystal in optoelectronic devices operating at shorter wavelength.
文章类型Article
其他摘要通过光学浮区法生长了不同浓度的beta-(Al, Ga)_2O_3混晶。当Al~(3+)掺杂浓度达到0.26的时候, 晶体生长出现开裂现象。进行X射线衍射分析, 结果表明所得beta-(Al, Ga)_2O_3混晶保持了beta-Ga_2O_3的晶体结构, 晶体没有出现其他杂质相, 并且随着Al~(3+)浓度的增加, 晶格常数a、b、c减小, beta角增大; 核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位, 两者的比例约为1: 3。通过测试beta-(Al, Ga)_2O_3
部门归属材料
DOI10.15541/jim20160135
资助者Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700]
收录类别SCI
资助者Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700] ; Science and Technology Commission of Shanghai Municipality [13111103700]
WOS记录号WOS:000389291000017
引用统计
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28222
专题中科院强激光材料重点实验室
通讯作者hlxiao2014@163.com; saiql@siom.ac.cn; xia_ct@siom.ac.cn
作者单位中国科学院上海光学精密机械研究所
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GB/T 7714
Xiao HL,Shao GQ,Sai QL,et al. Wide Bandgap Engineering of beta-(Al, Ga)(2)O-3 Mixed Crystals[J]. 无机材料学报,2016,31(11):1258.
APA 肖海林.,邵刚勤.,赛青林.,夏长泰.,周圣明.,...&xia_ct@siom.ac.cn.(2016).Wide Bandgap Engineering of beta-(Al, Ga)(2)O-3 Mixed Crystals.无机材料学报,31(11),1258.
MLA 肖海林,et al."Wide Bandgap Engineering of beta-(Al, Ga)(2)O-3 Mixed Crystals".无机材料学报 31.11(2016):1258.
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