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Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation
Wang, Hu; Qi, Hongji; Zhao, Jiaoling; Wang, Bin; Shao, Jianda; qhj@siom.ac.cn
2017
发表期刊Opt. Commun.
卷号387页码:214
摘要Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology.
文章类型Article
部门归属材料
DOI10.1016/j.optcom.2016.11.012
资助者National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021]
收录类别SCI
资助者National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021] ; National Natural Science Foundation of China, China [61308021]
WOS记录号WOS:000390597300035
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.siom.ac.cn/handle/181231/28206
专题中科院强激光材料重点实验室
通讯作者qhj@siom.ac.cn
作者单位中国科学院上海光学精密机械研究所
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Wang, Hu,Qi, Hongji,Zhao, Jiaoling,et al. Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation[J]. Opt. Commun.,2017,387:214.
APA Wang, Hu,Qi, Hongji,Zhao, Jiaoling,Wang, Bin,Shao, Jianda,&qhj@siom.ac.cn.(2017).Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation.Opt. Commun.,387,214.
MLA Wang, Hu,et al."Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation".Opt. Commun. 387(2017):214.
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