SIOM OpenIR  > 中科院强激光材料重点实验室
Multilayer deformation planarization by substrate pit suturing
Chai, Yingjie; Zhu, Meiping; Xing, Huanbin; Wang, Hu; Cui, Yun; Shao, Jianda; bree@siom.ac.cn; jdshao@siom.ac.cn
2016
Source PublicationOpt. Lett.
Volume41Issue:15Pages:3403
AbstractIn the pursuit of 1064 nm high-power laser resistance dielectric coatings in the nanosecond region, a group of HfO2/SiO2 high reflectors with and without suture layers were prepared on prearranged fused silica substrates with femtosecond laser pits. Surface morphology, global coating stress, and high-resolution cross sections were characterized to determine the effects of substrate pit suturing. Laser-induced damage resistance was investigated for samples with and without suture layers. Our results indicate considerable stability in terms of the nanosecond 1064 nm laser-induced damage threshold for samples having a suture layer, due to decreased electronic field (e-field) deformation with simultaneous elimination of internal cracks. In addition, a suture layer formed by plasma ion-assisted deposition could effectively improve global mechanical stress of the coatings. By effectively reducing the multilayer deformation using a suture layer, electron-beam high-reflective coatings, whose laser-induced damage resistance was not influenced by the substrate pit, can be prepared. (C) 2016 Optical Society of America
SubtypeArticle
Department材料
DOI10.1364/OL.41.003403
Funding OrganizationNational Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS)
Indexed BySCI
Funding OrganizationNational Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS) ; National Natural Science Foundation of China (NSFC) [61405225, 61505227, 61308021]; Youth Innovation Promotion Association of the Chinese Academy of Sciences (CAS)
WOS IDWOS:000381014400004
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.siom.ac.cn/handle/181231/28134
Collection中科院强激光材料重点实验室
Corresponding Authorbree@siom.ac.cn; jdshao@siom.ac.cn
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
Chai, Yingjie,Zhu, Meiping,Xing, Huanbin,et al. Multilayer deformation planarization by substrate pit suturing[J]. Opt. Lett.,2016,41(15):3403.
APA Chai, Yingjie.,Zhu, Meiping.,Xing, Huanbin.,Wang, Hu.,Cui, Yun.,...&jdshao@siom.ac.cn.(2016).Multilayer deformation planarization by substrate pit suturing.Opt. Lett.,41(15),3403.
MLA Chai, Yingjie,et al."Multilayer deformation planarization by substrate pit suturing".Opt. Lett. 41.15(2016):3403.
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