KMS Shanghai Institute of Optics and Fine Mechanics, CAS
| Faraday effect improvement by Dy3+-doping of terbium gallium garnet single crystal | |
| Chen, Zhe; Yang, Lei; Hang, Yin; Wang, Xiangyong; zhenzhe1201@sina.com | |
| 2016 | |
| Source Publication | J. Solid State Chem.
 |
| Volume | 233Pages:277 |
| Abstract | Highly transparent Dy3+-doped terbium gallium garnet (TGG) single crystal was grown by Czochralski (Cz) method. Phase composition of the crystal was tested by XRD measurements. The distribution coefficient of Dy3+ in the crystal was obtained. The optical and magneto-optical properties were analyzed in detail, and magnetic properties of the Dy3+-TGG crystal were studied. The paramagnetic behavior is observed down to 10 K. The as-grown crystal exhibited high optical transmittance, particularly in the visible region. The Faraday rotation was investigated over visible and near-infrared regions (VIS-NIR) at room temperature. The Verdet constants increase at measured wavelengths and high thermal stability was found in Dy3+-doped TGG, as compared to the properties of pure TGG, indicating that Dy3+-doped crystals are preferable for magneto-active materials used in Faraday devices at VIS-NIR wavelengths. (C) 2015 Elsevier Inc. All rights reserved. |
| Subtype | Article |
| Department | 材料 |
| DOI | 10.1016/j.jssc.2015.10.041 |
| Funding Organization | National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] |
| Indexed By | SCI |
| Funding Organization | National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] ; National Natural Science Foundation of China [51472257] |
| WOS ID | WOS:000369881200039 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.siom.ac.cn/handle/181231/28079 |
| Collection | 中科院强激光材料重点实验室 |
| Corresponding Author | zhenzhe1201@sina.com |
| Affiliation | 中国科学院上海光学精密机械研究所 |
| Recommended Citation GB/T 7714 | Chen, Zhe,Yang, Lei,Hang, Yin,et al. Faraday effect improvement by Dy3+-doping of terbium gallium garnet single crystal[J]. J. Solid State Chem.,2016,233:277. |
| APA | Chen, Zhe,Yang, Lei,Hang, Yin,Wang, Xiangyong,&zhenzhe1201@sina.com.(2016).Faraday effect improvement by Dy3+-doping of terbium gallium garnet single crystal.J. Solid State Chem.,233,277. |
| MLA | Chen, Zhe,et al."Faraday effect improvement by Dy3+-doping of terbium gallium garnet single crystal".J. Solid State Chem. 233(2016):277. |
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