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Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
Liu XZ(刘兴钊); Yue C(岳超); Xia ZT(夏长泰); Zhang WL(张万里); xzliu@uestc.edu.cn; xia_ct@siom.ac.cn
2016
Source PublicationChin. Phys. B
Volume25Issue:1
AbstractHigh-resistivity beta-Ga2O3 thin films were grown on Si-doped n-type conductive beta-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10(6) Omega. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10(18) cm(-3) and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10(2)% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive beta-Ga2O3 thin films and the n-type conductive beta-Ga2O3 single-crystal substrate.
SubtypeArticle
Department材料
DOI10.1088/1674-1056/25/1/017201
Funding OrganizationNational Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003]
Indexed BySCI
Funding OrganizationNational Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003] ; National Nature Science Foundation of China [61223002]; Science and Technology Commission of Shanghai Municipality, China [13111103700]; Specialized Research Fund for the Doctoral Program of Higher Education of China [2012018530003]
WOS IDWOS:000368455100068
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Document Type期刊论文
Identifierhttp://ir.siom.ac.cn/handle/181231/28030
Collection中科院强激光材料重点实验室
Corresponding Authorxzliu@uestc.edu.cn; xia_ct@siom.ac.cn
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
Liu XZ,Yue C,Xia ZT,et al. Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer[J]. Chin. Phys. B,2016,25(1).
APA 刘兴钊,岳超,夏长泰,张万里,xzliu@uestc.edu.cn,&xia_ct@siom.ac.cn.(2016).Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer.Chin. Phys. B,25(1).
MLA 刘兴钊,et al."Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer".Chin. Phys. B 25.1(2016).
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