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Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias
He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji; ya.cheng@siom.ac.cn; ksugioka@riken.jp
2017
Source PublicationSci Rep
Volume7
AbstractThree-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.
SubtypeArticle
Department信息光电
DOI10.1038/srep40785
Funding OrganizationNational Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300]
Indexed BySCI
Funding OrganizationNational Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300] ; National Natural Science Foundation of China [61327902, 11134010]; National Basic Research Program of China [2014CB921300]
WOS IDWOS:000392185300001
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.siom.ac.cn/handle/181231/27540
Collection信息光学与光电技术实验室
Corresponding Authorya.cheng@siom.ac.cn; ksugioka@riken.jp
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
He, Fei,Yu, Junjie,Tan, Yuanxin,et al. Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias[J]. Sci Rep,2017,7.
APA He, Fei.,Yu, Junjie.,Tan, Yuanxin.,Chu, Wei.,Zhou, Changhe.,...&ksugioka@riken.jp.(2017).Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.Sci Rep,7.
MLA He, Fei,et al."Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias".Sci Rep 7(2017).
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