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Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation
Lei, Kai; Jiang, Minghui; Wang, Yang; Wu, Yiqun; ywang@siom.ac.cn
2016
Source Publication2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
ISSN0277-786X
Department存储
AbstractThe thermal transmission process induced by single-shot femtosecond laser pulses in Sb70Te30 phase change thin films with or without a Ag thermal-conductive layer was studied numerically with a two-temperature model. The distribution of electron and lattice temperatures was calculated by a one-dimensional finite difference method. The different temperature evolution characteristics on different time scales (from several picoseconds, to tens of picoseconds and to several nanoseconds) are discussed based on the electron-phonon coupling theory. The influence of a special point in the lattice temperature evolution curves on the crystallization time of phase change thin films is analyzed. The results will be helpful to the deeper understanding of the ultrafast phase transition mechanism of phase change memory materials.
Language英语
Document Type会议论文
Identifierhttp://ir.siom.ac.cn/handle/181231/27430
Collection高密度光存储技术实验室
Corresponding Authorywang@siom.ac.cn
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
Lei, Kai,Jiang, Minghui,Wang, Yang,et al. Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation[C],2016.
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