SIOM OpenIR  > 高密度光存储技术实验室
Thermal lithography characteristics of SbBi thin films
Li, Liang; Zhang, Kui; zkui1939@163.com
2016
Source Publication2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
ISSN0277-786X
Department存储
AbstractLaser thermal lithography technology based on the optothermal mode is a very promising fabrication approach in high-density optical storage and semiconductor industry. SbBi thin film is a typical phase change material which has been deep-going studied and widely used as the super-resolution mask layer. Phase transformation of the SbBi material from amorphous to crystalline state can be achieved by vacuum annealing or laser irradiating. In this work, SbBi thin films as a new thermal lithography material are investigated for the first time. The thermal lithography characteristics of SbBi thin films were studied by means of etching in the ammonium sulfide solution. Line-shaped structures were developed using our laser-induced crystallization apparatus, followed by etching in the ammonium sulfide solution. It is found that the etching rate of the amorphous state is greater than that of the crystalline state, which are 17.8 nm/min and 4 nm/min, respectively. The mechanism of the difference in etching rate between the two states is also discussed. These results indicate that SbBi thin film is a potential candidate for thermal lithography materials.
Language英语
Document Type会议论文
Identifierhttp://ir.siom.ac.cn/handle/181231/27428
Collection高密度光存储技术实验室
Corresponding Authorzkui1939@163.com
Affiliation中国科学院上海光学精密机械研究所
Recommended Citation
GB/T 7714
Li, Liang,Zhang, Kui,zkui1939@163.com. Thermal lithography characteristics of SbBi thin films[C],2016.
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