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Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs
Madeo, J.; Margiolakis, A.; Zhao, Z.-Y.; Hale, P.J.; Man, M.K.L.; Zhao, Q.-Z.; Peng, W.; Shi, W.-Z.; Dani, K.M.; Mariserla, Bala Murali Krishna
2016
Source Publication2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
Department强光
AbstractWe measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices. ? 2016 IEEE.
Language英语
Document Type会议论文
Identifierhttp://ir.siom.ac.cn/handle/181231/27377
Collection强场激光物理国家重点实验室
Recommended Citation
GB/T 7714
Madeo, J.,Margiolakis, A.,Zhao, Z.-Y.,et al. Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs[C],2016.
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