| Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs | |
| Madeo, J.; Margiolakis, A.; Zhao, Z.-Y.; Hale, P.J.; Man, M.K.L.; Zhao, Q.-Z.; Peng, W.; Shi, W.-Z.; Dani, K.M.; Mariserla, Bala Murali Krishna | |
| 2016 | |
| Source Publication | 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings |
| Department | 强光 |
| Abstract | We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices. ? 2016 IEEE. |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.siom.ac.cn/handle/181231/27377 |
| Collection | 强场激光物理国家重点实验室 |
| Recommended Citation GB/T 7714 | Madeo, J.,Margiolakis, A.,Zhao, Z.-Y.,et al. Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs[C],2016. |
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