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Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber
Zhang QL(张秋琳); Feng BH(冯宝华); Zhang DX(张东香); Fu PM(傅盘铭); Zhang ZG(张治国); Zhao ZW(赵志伟); Deng PZ(邓佩珍); Xu J(徐军); Xu XD(徐晓东); Wang YG(王勇刚); Ma XY(马晓宇); Zhang, QL (reprint author), Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
2003
Source PublicationChin. Phys. Lett.
Volume20Issue:10Pages:1741
AbstractA passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.
SubtypeArticle
Indexed BySCI
Language英语
WOS IDWOS:000186039100025
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Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/18480
Collection激光与光电子功能材料研发中心
Corresponding AuthorZhang, QL (reprint author), Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
Affiliation1.Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhang QL,Feng BH,Zhang DX,et al. Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber[J]. Chin. Phys. Lett.,2003,20(10):1741.
APA 张秋琳.,冯宝华.,张东香.,傅盘铭.,张治国.,...&Zhang, QL .(2003).Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber.Chin. Phys. Lett.,20(10),1741.
MLA 张秋琳,et al."Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber".Chin. Phys. Lett. 20.10(2003):1741.
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