SIOM OpenIR  > 强场激光物理国家重点实验室
Electronic structure and optical properties of zinc-blende GaN quantum dots
Feng, DH; Jia, TQ; Xu, ZZ; Feng, DH (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
2003
Source PublicationChin. Phys.
Volume12Issue:9Pages:1016
AbstractThe energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.
SubtypeArticle
Indexed BySCI
Language英语
WOS IDWOS:000186150600017
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Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/18442
Collection强场激光物理国家重点实验室
Corresponding AuthorFeng, DH (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
Affiliation1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
2.Zhongshan Univ, State Key Lab Opt & Elect Mat & Technol, Guangzhou 510275, Peoples R China
Recommended Citation
GB/T 7714
Feng, DH,Jia, TQ,Xu, ZZ,et al. Electronic structure and optical properties of zinc-blende GaN quantum dots[J]. Chin. Phys.,2003,12(9):1016.
APA Feng, DH,Jia, TQ,Xu, ZZ,&Feng, DH .(2003).Electronic structure and optical properties of zinc-blende GaN quantum dots.Chin. Phys.,12(9),1016.
MLA Feng, DH,et al."Electronic structure and optical properties of zinc-blende GaN quantum dots".Chin. Phys. 12.9(2003):1016.
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