SIOM OpenIR  > 高密度光存储技术实验室
相变光盘介电薄膜ZnS-SiO_2的微结构和光学特性
Alternative TitleMicrostructure and Optical Property of ZnS-SiO_2 Dielectric Thin Films for Phase-change Optical Disks
刘波; 阮昊; 干福熹
2003
Source Publication光子学报
Volume32Issue:7Pages:834
Abstract采用射频磁控溅射法制备了ZnS-SiO_2介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO_2薄膜微结构和折射率n的影响。研究表明,ZnS-SiO_2 薄膜的中存在微小晶粒,大小为2-10 nm的ZnS颗粒分布在SiO_2基体中,当溅射功率和溅射气压变化时,ZnS-SiO_2薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于机变光盘的高质量ZnS-SiO_2介电薄膜。
SubtypeArticle
Other AbstractThe ZnS-SiO_2dielectric thin films were deposited by using RF magnetron-sputtering. The effect of deposition conditions on the microstructure and refractive index n was studied by TEM and ellipsometry. The grain size of ZnS-SiO_2film is very small and ZnS is particulate with small sized particles, at around 2-10 nm, in a SiO_2matrix. Significant changes in microstructure occur due to variation of the sputtering power and pressure. The change of microstructure of ZnS-SiO_2film is mainly responsible for the dependence of the refractive index n on the sputtering pressure and power. By optimizing the sputtering process, high performance ZnS-SiO_2 dielectric film for phase-change optical disks could be fabricated.
Funding OrganizationSupported by Shanghai Applied Physics Research Center(99JC14009) ; National Science Foundation of China(59832060) ; Supported by Shanghai Applied Physics Research Center(99JC14009) ; National Science Foundation of China(59832060)
Indexed ByCSCD
Language英语
Funding OrganizationSupported by Shanghai Applied Physics Research Center(99JC14009) ; National Science Foundation of China(59832060) ; Supported by Shanghai Applied Physics Research Center(99JC14009) ; National Science Foundation of China(59832060)
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Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/18255
Collection高密度光存储技术实验室
Affiliation1.Liu Bo, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. O. Box 800-211, ShangHai 201800, China.
2.Ruan Hao, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. O. Box 800-211, ShangHai 201800, China.
3.Gan Fuxi, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. O. Box 800-211, ShangHai 201800, China.
Recommended Citation
GB/T 7714
刘波,阮昊,干福熹. 相变光盘介电薄膜ZnS-SiO_2的微结构和光学特性[J]. 光子学报,2003,32(7):834.
APA 刘波,阮昊,&干福熹.(2003).相变光盘介电薄膜ZnS-SiO_2的微结构和光学特性.光子学报,32(7),834.
MLA 刘波,et al."相变光盘介电薄膜ZnS-SiO_2的微结构和光学特性".光子学报 32.7(2003):834.
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