| Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films | |
| Wei, JS; Gan, FX; Wei, JS (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China | |
| 2003 | |
| Source Publication | Thin Solid Films
 |
| Volume | 441Issue:1_2Pages:292 |
| Abstract | In this article, the amorphous Ge2Sb2Te5 phase-change optical recording thin films are prepared under different conditions, and their dynamic crystallization process is investigated experimentally. For as-deposited amorphous samples, the influence of sputtering power on the crystallization process is not obvious, and their crystallization process is composed of onset, nucleation, and growth stages. However, for melt-quenched amorphous samples, the crystallization process is made up of nucleation and growth stages, only. Based on the classic nucleation theory of liquid droplets from supersaturated vapor, the kinetics of crystallization and the dynamic crystallization evolution of Ge2Sb2Te5 is analyzed and discussed. The results show that the main reason that the crystallization time for melt-quenched amorphous samples is shorter than that for as-deposited amorphous samples is the existence of a lot of minute nuclei in the melt-quenched amorphous samples. (C) 2003 Elsevier B.V. All rights reserved. |
| Subtype | Article |
| DOI | 10.1016/S0040-6090(03)00977-5 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000185165600045 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Version | 出版稿 |
| Identifier | http://ir.siom.ac.cn/handle/181231/18171 |
| Collection | 高密度光存储技术实验室 |
| Corresponding Author | Wei, JS (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China |
| Affiliation | Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China |
| Recommended Citation GB/T 7714 | Wei, JS,Gan, FX,Wei, JS . Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films[J]. Thin Solid Films,2003,441(1_2):292. |
| APA | Wei, JS,Gan, FX,&Wei, JS .(2003).Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films.Thin Solid Films,441(1_2),292. |
| MLA | Wei, JS,et al."Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films".Thin Solid Films 441.1_2(2003):292. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 187.pdf（456KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | Application Full Text | |
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