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Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films
Wei, JS; Gan, FX; Wei, JS (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
2003
Source PublicationThin Solid Films
Volume441Issue:1_2Pages:292
AbstractIn this article, the amorphous Ge2Sb2Te5 phase-change optical recording thin films are prepared under different conditions, and their dynamic crystallization process is investigated experimentally. For as-deposited amorphous samples, the influence of sputtering power on the crystallization process is not obvious, and their crystallization process is composed of onset, nucleation, and growth stages. However, for melt-quenched amorphous samples, the crystallization process is made up of nucleation and growth stages, only. Based on the classic nucleation theory of liquid droplets from supersaturated vapor, the kinetics of crystallization and the dynamic crystallization evolution of Ge2Sb2Te5 is analyzed and discussed. The results show that the main reason that the crystallization time for melt-quenched amorphous samples is shorter than that for as-deposited amorphous samples is the existence of a lot of minute nuclei in the melt-quenched amorphous samples. (C) 2003 Elsevier B.V. All rights reserved.
SubtypeArticle
DOI10.1016/S0040-6090(03)00977-5
Indexed BySCI
Language英语
WOS IDWOS:000185165600045
Citation statistics
Cited Times:27[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/18171
Collection高密度光存储技术实验室
Corresponding AuthorWei, JS (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
AffiliationChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Wei, JS,Gan, FX,Wei, JS . Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films[J]. Thin Solid Films,2003,441(1_2):292.
APA Wei, JS,Gan, FX,&Wei, JS .(2003).Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films.Thin Solid Films,441(1_2),292.
MLA Wei, JS,et al."Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films".Thin Solid Films 441.1_2(2003):292.
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