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Growth mechanism of Cr : forsterite laser crystal with high Cr concentration
Chen, W; Boulon, G; Boulon, G (reprint author), Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Chim Mat Luminescents, Bat A Kastler,10 Rue Ampere, F-69622 Villeurbanne, France
2003
Source PublicationOpt. Mater.
Volume24Issue:1_2Pages:163
AbstractHigh concentration Cr:forsterite (Cr:Mg2SiO4) laser crystals were grown out successfully by a medium-frequency induction-heating Czochralski method in an atmosphere containing oxygen. In the crystal, most of Cr ions appear as trivalent Cr3+ and a small part of Cr ions appear as tetravalent Cr4+. The doping of trivalent Cr3+ is mainly limited by its segregation coefficient. The formation of tetravalent Cr4+ is related not only to the initial Cr content in the melt and the oxygen partial pressure in the growth chamber, but also most probably to the concentration of an oxygen vacancy existing in the crystallized Cr:forsterite. Under this circumstance, those holes released from the recombination of the oxygen vacancies determine the oxidation from trivalent Cr3+ to tetravalent Cr4+ in the crystal. It was proved that an as-grown Cr:forsterite crystal with such an oxygen vacancy could possess much higher Cr4+ absorption intensity in the near-infrared wavelength range after an oxidation annealing. (C) 2003 Elsevier B.V. All rights reserved.
SubtypeArticle; Proceedings Paper
DOI10.1016/S0925-3467(03)00120-4
Indexed BySCI
Language英语
WOS IDWOS:000186194600025
Citation statistics
Cited Times:16[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/18134
Collection高功率激光单元技术研发中心
Corresponding AuthorBoulon, G (reprint author), Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Chim Mat Luminescents, Bat A Kastler,10 Rue Ampere, F-69622 Villeurbanne, France
Affiliation1.Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Chim Mat Luminescents, F-69622 Villeurbanne, France
2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Chen, W,Boulon, G,Boulon, G . Growth mechanism of Cr : forsterite laser crystal with high Cr concentration[J]. Opt. Mater.,2003,24(1_2):163.
APA Chen, W,Boulon, G,&Boulon, G .(2003).Growth mechanism of Cr : forsterite laser crystal with high Cr concentration.Opt. Mater.,24(1_2),163.
MLA Chen, W,et al."Growth mechanism of Cr : forsterite laser crystal with high Cr concentration".Opt. Mater. 24.1_2(2003):163.
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