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Alternative TitleChanges of Properties and Structure in Amorphous As_2S_3 Semiconductor Films Induced by Light Illumination
刘启明; 干福熹
Source Publication中国激光
Other AbstractThe optical absorption edges of amorphous As_2S_3 films shifted to lower energy with band gap light illumination or annealing near the glass-transition temperature. The magnitude of red shift increased with the increase of the intensity of illumination light and the time of illumination and became saturated finally. The red shift in well-annealed As_2S_3 film was reversible. Photocrystallization was also observed in the illuminated As_2S_3 films with scanning electron microscope (SEM) measurements and the crystal phase was more with higher intensity of illumination light. The photoinduced effects in amorphous As_2S_3 films were ascribed to photostructural changes and the change mechanisms are discussed in this paper.
Indexed ByEI
Document Type期刊论文
Affiliation1.刘启明, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
2.干福熹, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
Recommended Citation
GB/T 7714
刘启明,干福熹. 非晶As_2S_3半导体薄膜在激光作用下的性能及结构研究[J]. 中国激光,2002,29(10):925.
APA 刘启明,&干福熹.(2002).非晶As_2S_3半导体薄膜在激光作用下的性能及结构研究.中国激光,29(10),925.
MLA 刘启明,et al."非晶As_2S_3半导体薄膜在激光作用下的性能及结构研究".中国激光 29.10(2002):925.
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V29-10-925.pdf(124KB)期刊论文作者接受稿开放获取CC BY-NC-SAApplication Full Text
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