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掺杂氧的Ge-Sb-Te相变薄膜的光学性质
Alternative TitleOptical Properties of Oxygen-Doped Ge-Sb-Te Phase-Change Films
顾四朋; 侯立松; 刘波; 陈静
2002
Source Publication光学学报
Volume22Issue:9Pages:1137
Abstract研究了氧掺入Ge-Sb-Te射频溅射相变薄膜在400 nm~800 nm区域的光学常数(n,k)和反射、透射光谱,发现适光的氧掺入能大大增加退火前后反射率对比度,因此可通过氧掺入改良Ge-Sb-Te相变材料的光存储性能。
SubtypeArticle
Other AbstractOptical properties of monolayer oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method were studied in the region of 400 nm~800 nm, including refractive index, extinction coefficient, reflection and transmission spectra. The results indicated that larger reflectivity contrast can be achieved by appropriate doping of oxygen, thus the recording properties of the Ge-Sb-Te film material can be improved by the oxygen-doping.
Funding Organization国家自然科学基金(59832060) ; 国家自然科学基金(59832060)
Indexed ByEI
Language中文
Funding Organization国家自然科学基金(59832060) ; 国家自然科学基金(59832060)
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17873
Collection高密度光存储技术实验室
Affiliation1.顾四朋, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
2.侯立松, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
3.刘波, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
4.陈静, 中国科学院上海技术物理所, 国家红外物理实验室, 上海 200083, 中国.
Recommended Citation
GB/T 7714
顾四朋,侯立松,刘波,等. 掺杂氧的Ge-Sb-Te相变薄膜的光学性质[J]. 光学学报,2002,22(9):1137.
APA 顾四朋,侯立松,刘波,&陈静.(2002).掺杂氧的Ge-Sb-Te相变薄膜的光学性质.光学学报,22(9),1137.
MLA 顾四朋,et al."掺杂氧的Ge-Sb-Te相变薄膜的光学性质".光学学报 22.9(2002):1137.
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V22-9-1137.pdf(126KB)期刊论文作者接受稿开放获取CC BY-NC-SAApplication Full Text
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