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GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析
Alternative TitleGrowth of LiGaO_2 as a Substrate of GaN by Temperature Gradient Technique
杨卫桥; 干福熹; 邓佩珍; 周永宗; 徐军; 李杼智; 蒋成勇
2002
Source Publication光学学报
Volume22Issue:6Pages:761
Abstract以温度梯度法生长LiGaO_2晶体,通过形貌观察、X射线衍射分析和X射线光电子能谱分析确认在样品的中部形成了单一相的LiGaO_2晶体。但在生长过程中由于CO气体的存在,熔体表面形成了LiO-和金属态的Ga,钼坩埚被侵蚀形成Li_2MoO_4进入溶体,使样品上下两部分的结晶质量变差。
SubtypeArticle
Other AbstractThe growth of LiGaO_2 by temperature gradient technique (TGT) is reported. Through topographic observing, X-ray diffraction analysis and X-ray photoelectron spectroscopy analysis, it is found that the single-phase crystal LiGaO_2 is formed in the middle of the sample. Owing to the existence of CO, LiO~- and Ga is formed on the surface of melt during growth, then Li_2MoO_4 is formed in the melt due to Mo crucible is eroded by LiO~- and Ga, the crystallization degraded at the upper and lower parts of the sample.
Indexed ByEI
Language中文
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17861
Collection激光与光电子功能材料研发中心
Affiliation1.杨卫桥, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
2.干福熹, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
3.邓佩珍, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
4.周永宗, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
5.徐军, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
6.李杼智, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
7.蒋成勇, 中国科学院上海光学精密机械研究所,
Recommended Citation
GB/T 7714
杨卫桥,干福熹,邓佩珍,等. GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析[J]. 光学学报,2002,22(6):761.
APA 杨卫桥.,干福熹.,邓佩珍.,周永宗.,徐军.,...&蒋成勇.(2002).GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析.光学学报,22(6),761.
MLA 杨卫桥,et al."GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析".光学学报 22.6(2002):761.
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