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Alternative TitleGrowth of LiGaO_2 as a Substrate of GaN by Temperature Gradient Technique
杨卫桥; 干福熹; 邓佩珍; 周永宗; 徐军; 李杼智; 蒋成勇
Source Publication光学学报
Other AbstractThe growth of LiGaO_2 by temperature gradient technique (TGT) is reported. Through topographic observing, X-ray diffraction analysis and X-ray photoelectron spectroscopy analysis, it is found that the single-phase crystal LiGaO_2 is formed in the middle of the sample. Owing to the existence of CO, LiO~- and Ga is formed on the surface of melt during growth, then Li_2MoO_4 is formed in the melt due to Mo crucible is eroded by LiO~- and Ga, the crystallization degraded at the upper and lower parts of the sample.
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Document Type期刊论文
Affiliation1.杨卫桥, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
2.干福熹, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
3.邓佩珍, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
4.周永宗, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
5.徐军, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
6.李杼智, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
7.蒋成勇, 中国科学院上海光学精密机械研究所,
Recommended Citation
GB/T 7714
杨卫桥,干福熹,邓佩珍,等. GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析[J]. 光学学报,2002,22(6):761.
APA 杨卫桥.,干福熹.,邓佩珍.,周永宗.,徐军.,...&蒋成勇.(2002).GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析.光学学报,22(6),761.
MLA 杨卫桥,et al."GaN衬底材料LiGaO_2晶体的温度梯度法生长及分析".光学学报 22.6(2002):761.
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