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Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser
Dai Shixun; Hu Lili; Liu Zhuping; Huang Guosong; Jiang Zhonghong; Yasukazu Izawa
2002
Source PublicationChin. J. Lasers B
VolumeB11Issue:2Pages:84
AbstractQuasi-CW diode-pumped Yb~(3+): borate glass and Yb~(3+): phosphate glass microchip lasers have been reported. From Yb~(3+): phosphate glass laser, the maximum average output power was 31 mW and the optical-optical conversion efficiency was 5%. The maximum average output power was 18 mW, and optical-optical conversion efficiency was 3% for Yb~(3+): borate glass laser.
SubtypeArticle
Indexed ByEI
Language英语
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17819
Collection高功率激光单元技术研发中心
Recommended Citation
GB/T 7714
Dai Shixun,Hu Lili,Liu Zhuping,et al. Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser[J]. Chin. J. Lasers B,2002,B11(2):84.
APA Dai Shixun,Hu Lili,Liu Zhuping,Huang Guosong,Jiang Zhonghong,&Yasukazu Izawa.(2002).Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser.Chin. J. Lasers B,B11(2),84.
MLA Dai Shixun,et al."Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser".Chin. J. Lasers B B11.2(2002):84.
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