Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser | |
Dai Shixun; Hu Lili; Liu Zhuping; Huang Guosong; Jiang Zhonghong; Yasukazu Izawa | |
2002 | |
Source Publication | Chin. J. Lasers B
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Volume | B11Issue:2Pages:84 |
Abstract | Quasi-CW diode-pumped Yb~(3+): borate glass and Yb~(3+): phosphate glass microchip lasers have been reported. From Yb~(3+): phosphate glass laser, the maximum average output power was 31 mW and the optical-optical conversion efficiency was 5%. The maximum average output power was 18 mW, and optical-optical conversion efficiency was 3% for Yb~(3+): borate glass laser. |
Subtype | Article |
Indexed By | EI |
Language | 英语 |
Document Type | 期刊论文 |
Version | 出版稿 |
Identifier | http://ir.siom.ac.cn/handle/181231/17819 |
Collection | 高功率激光单元技术研发中心 |
Recommended Citation GB/T 7714 | Dai Shixun,Hu Lili,Liu Zhuping,et al. Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser[J]. Chin. J. Lasers B,2002,B11(2):84. |
APA | Dai Shixun,Hu Lili,Liu Zhuping,Huang Guosong,Jiang Zhonghong,&Yasukazu Izawa.(2002).Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser.Chin. J. Lasers B,B11(2),84. |
MLA | Dai Shixun,et al."Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser".Chin. J. Lasers B B11.2(2002):84. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
V11-2-84.pdf(717KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | Application Full Text |
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