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Photoinduced Phenomena in Amorphous Ge-As-S System
Liu Qiming; Gu Donghong; Huang Mingju; Gan Fuxi
2002
Source PublicationChin. J. Lasers B
VolumeB11Issue:1Pages:39
AbstractX-ray diffraction and reflectivity as well as transmittance on Ge-As-S bulk and thin films were performed. It was observed photodarkening in Ge-As-S thin films with band gap light illumination from an argon laser of 514.5 nm wavelength and shifting the optical transmittance edge to shorter wavelength, the magnitude of which increases with the increase of the intensity of illumination light. In the Ge-As-S bulk, however, it was not observed photodarkening. Photodarkening in Ge-As-S system was discussed.
SubtypeArticle
Indexed ByEI
Language英语
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17817
Collection高密度光存储技术实验室
Recommended Citation
GB/T 7714
Liu Qiming,Gu Donghong,Huang Mingju,et al. Photoinduced Phenomena in Amorphous Ge-As-S System[J]. Chin. J. Lasers B,2002,B11(1):39.
APA Liu Qiming,Gu Donghong,Huang Mingju,&Gan Fuxi.(2002).Photoinduced Phenomena in Amorphous Ge-As-S System.Chin. J. Lasers B,B11(1),39.
MLA Liu Qiming,et al."Photoinduced Phenomena in Amorphous Ge-As-S System".Chin. J. Lasers B B11.1(2002):39.
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