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V_2O_5薄膜用作SO_2气敏传感器
Alternative TitleSO_2 gas sensor based on vanadium pentoxide thin film
汤兆胜; 孙玉琴; 范正修
2002
Source Publication功能材料
Volume33Issue:1Pages:52
Abstract在O_2/Ar气氛中,用射频磁控溅射法在常温下溅射V_2O_5粉末靶得到氧化钒薄膜。在350℃热处理后,经XRD分析,薄膜的主要成分为V_2O_5。在不同温度下对V_2O_5薄膜作了对空气和SO_2的混合气氛的敏感特性测试分析,发现在300~390℃范围内,薄膜对SO_2所气体灵敏度随温度升高而降低。在SO_2气体去除后,薄膜的电阻值能恢复到初始状态,气敏过程可反复进行。文章对V_2O_5薄膜的气敏机理作了定性描述。
SubtypeArticle
Other AbstractVanadium pentoxide thin films were prepared with an radio frequency magnetron sputtering method from a compressed V_2O_5 powder target. X-ray diffraction was used to characterize the structures of the films. The sensitive characteristics of sample films to SO_2 were carried out at the temperatures from 300℃ to 410℃. The concentration of SO_2 was fixed at 0.7g/m~3 and the sensing tests were performed in the air with a relative humid of 90%. The sensing results showed that in the range from 300℃ to 390℃, the sensitivity to SO_2 of V_2O_5 films increased with temperature, while decreased beyond 390℃. Especially, the resistance of V_2O_5 film could be recovered after removing the target gas without conducting an additional desorbing process at the tested temperatures. A sensing mechanism was proposed in the text.
Indexed ByCSCD
Language中文
CSCD IDCSCD:995842
Citation statistics
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17814
Collection光学薄膜技术研究与发展中心
Affiliation1.汤兆胜, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
2.孙玉琴, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
3.范正修, 中国科学院上海光学精密机械研究所, 上海 201800, 中国.
Recommended Citation
GB/T 7714
汤兆胜,孙玉琴,范正修. V_2O_5薄膜用作SO_2气敏传感器[J]. 功能材料,2002,33(1):52.
APA 汤兆胜,孙玉琴,&范正修.(2002).V_2O_5薄膜用作SO_2气敏传感器.功能材料,33(1),52.
MLA 汤兆胜,et al."V_2O_5薄膜用作SO_2气敏传感器".功能材料 33.1(2002):52.
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