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Photoinduced effects in amorphous semiconductor Ge(S, Se)(2) chalcogenide films
Liu, QM; Gan, FX; Liu, QM (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China.
2002
Source PublicationChin. Sci. Bull.
Volume47Issue:17Pages:1428
AbstractThe blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) chal-cogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystallization was also observed in amorphous Ge(S,Se)(2) films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)(2) films could be applied to designing some new kinds of optical storage materials.
SubtypeArticle
DOI10.1360/02tb9314
Indexed BySCI
Language英语
WOS IDWOS:000177653300004
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17755
Collection高密度光存储技术实验室
Corresponding AuthorLiu, QM (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China.
AffiliationChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Liu, QM,Gan, FX,Liu, QM . Photoinduced effects in amorphous semiconductor Ge(S, Se)(2) chalcogenide films[J]. Chin. Sci. Bull.,2002,47(17):1428.
APA Liu, QM,Gan, FX,&Liu, QM .(2002).Photoinduced effects in amorphous semiconductor Ge(S, Se)(2) chalcogenide films.Chin. Sci. Bull.,47(17),1428.
MLA Liu, QM,et al."Photoinduced effects in amorphous semiconductor Ge(S, Se)(2) chalcogenide films".Chin. Sci. Bull. 47.17(2002):1428.
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