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Photodarkening in amorphous As2S3 thin films
Liu Qiming; Gan Fuxi; Liu, QM (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, POB 800-216, Shanghai 201800, Peoples R China.
2002
Source PublicationChin. Phys. Lett.
Volume19Issue:1Pages:124
AbstractThe photodarkening effect in amorphous As2S3 films is studied. The optical absorption edge shifts to a lower energy after illumination at the bandgap light of 514.5 nm wavelength by an argon laser. The shift in well-annealed films can be recovered by annealing at 180degreesC for 1 h but in un-annealed films it is irreversible. In addition, it was found that the magnitude of photodarkening DeltaE increased with the increase of illumination light intensity and illumination time. The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories,
SubtypeArticle
Indexed BySCI
Language英语
WOS IDWOS:000173357800039
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.siom.ac.cn/handle/181231/17748
Collection高密度光存储技术实验室
Corresponding AuthorLiu, QM (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, POB 800-216, Shanghai 201800, Peoples R China.
AffiliationChinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
Recommended Citation
GB/T 7714
Liu Qiming,Gan Fuxi,Liu, QM . Photodarkening in amorphous As2S3 thin films[J]. Chin. Phys. Lett.,2002,19(1):124.
APA Liu Qiming,Gan Fuxi,&Liu, QM .(2002).Photodarkening in amorphous As2S3 thin films.Chin. Phys. Lett.,19(1),124.
MLA Liu Qiming,et al."Photodarkening in amorphous As2S3 thin films".Chin. Phys. Lett. 19.1(2002):124.
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