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Crystallization of Ge_2Sb_2Te_5 phase-change optical disk media
Liu B(刘波); Ruan H(阮昊); Gan FX(干福熹)
Source PublicationChin. Phys.
AbstractIn this paper, the crystallization behaviour of amorphous Ge_2Sb_2Te_5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge_2Sb_2Te_5 thin films, the crystallization temperature is about 200°C and the melting temperature is 546.87°C. The activation energy for the crystallization, Ea, is 2.25eV. The crystallization dynamics for Ge_2Sb_2Te_5 thin films obeys the law of nucleation and growth reaction. The sputtered Ge_2Sb_2Te_5 films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge2Sb2Te5 phase-change optical disk.
Funding Organization国家自然科学基金 ; 上海市应用物理中心基金 ; 国家自然科学基金 ; 上海市应用物理中心基金
Indexed BySCI
Funding Organization国家自然科学基金 ; 上海市应用物理中心基金 ; 国家自然科学基金 ; 上海市应用物理中心基金
WOS IDWOS:000174488000018
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Cited Times:16[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
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GB/T 7714
Liu B,Ruan H,Gan FX. Crystallization of Ge_2Sb_2Te_5 phase-change optical disk media[J]. Chin. Phys.,2002,11(3):293.
APA 刘波,阮昊,&干福熹.(2002).Crystallization of Ge_2Sb_2Te_5 phase-change optical disk media.Chin. Phys.,11(3),293.
MLA 刘波,et al."Crystallization of Ge_2Sb_2Te_5 phase-change optical disk media".Chin. Phys. 11.3(2002):293.
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